STGB10NB37LZ - STMicroelectronics

Manufacturer Part Number

STGB10NB37LZ

Manufacturer

STMicroelectronics

Introduction

This product is an IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, a leading semiconductor manufacturer.

Product Features and Performance

High power handling capability of 125 W

Collector-Emitter Breakdown Voltage of 440 V

Collector Current (Max) of 20 A

Low Collector-Emitter Saturation Voltage (Vce(on)) of 1.8 V at 4.5 V, 10 A

Fast switching with Turn-on/Turn-off time of 1.3 µs/8 µs

Low Switching Energy of 2.4 mJ (on), 5 mJ (off)

Wide Operating Temperature Range of -65°C to 175°C

Product Advantages

Excellent power handling and efficiency

High voltage and current capabilities

Fast switching for improved system performance

Robust design for reliable operation

Key Technical Parameters

Power Rating: 125 W

Collector-Emitter Breakdown Voltage: 440 V

Collector Current (Max): 20 A

Collector-Emitter Saturation Voltage (Vce(on)): 1.8 V @ 4.5 V, 10 A

Switching Energy: 2.4 mJ (on), 5 mJ (off)

Turn-on/Turn-off Time: 1.3 µs/8 µs

Operating Temperature Range: -65°C to 175°C

Quality and Safety Features

RoHS3 compliant for environmental safety

Robust DPAK (TO-263) package for reliable operation

Compatibility

This IGBT is suitable for a wide range of power electronics applications, including motor drives, power supplies, and industrial control systems.

Application Areas

Power conversion and control

Motor drives

Power supplies

Industrial automation and control

Product Lifecycle

This product is currently available and not nearing discontinuation. Replacement or upgraded models may be available in the future.

Key Reasons to Choose This Product

Excellent power handling and efficiency

High voltage and current capabilities

Fast switching for improved system performance

Robust design for reliable operation

Wide operating temperature range for versatile applications

RoHS3 compliance for environmental safety