Manufacturer Part Number
STGB10NC60KDT4
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product - Transistor - IGBT - Single
Product Features and Performance
Optimized for high-frequency, high-efficiency switching applications
Low conduction and switching losses
High speed switching performance
High current handling capability
Product Advantages
Improved energy efficiency
Robust design for reliable operation
Compact and space-saving package
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 20 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Reverse Recovery Time (trr): 22 ns
Gate Charge: 19 nC
Current Collector Pulsed (Icm): 30 A
Switching Energy: 55J (on), 85J (off)
Td (on/off) @ 25°C: 17ns/72ns
Quality and Safety Features
RoHS3 Compliant
Reliable and durable construction
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switching mode power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating
Product Lifecycle
Currently available and in active production
No known plans for discontinuation or end-of-life
Several Key Reasons to Choose This Product
High efficiency and low losses for improved energy savings
Robust design for reliable long-term operation
Fast switching capabilities for high-frequency applications
Compact and space-saving package for flexible system design
Broad compatibility with various power electronics applications