Manufacturer Part Number
STGB19NC60HDT4
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistors IGBTs Single
Product Features and Performance
ROHS3 Compliant
D2PAK Packaging
PowerMESH Series
Tape & Reel Packaging
Wide Operating Temperature Range: -55°C to 150°C
High Power Capability: 130W
High Voltage Capability: 600V Collector-Emitter Breakdown Voltage
High Current Capability: 40A Collector Current (Max), 60A Pulsed Collector Current
Low Collector-Emitter Saturation Voltage: 2.5V @ 15V, 12A
Fast Switching Speed: 25ns Turn-On Delay, 97ns Turn-Off Delay
Product Advantages
Excellent Power Handling Capability
High Voltage and Current Ratings
Low Conduction and Switching Losses
Fast Switching Performance
Reliable Operation over Wide Temperature Range
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 40A
Collector-Emitter Saturation Voltage: 2.5V @ 15V, 12A
Reverse Recovery Time: 31ns
Gate Charge: 53nC
Switching Energy: 85J (on), 189J (off)
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount Packaging
Compatible with Standard IGBT Gate Drive Circuits
Application Areas
Power Conversion and Inversion
Motor Drives
Uninterruptible Power Supplies (UPS)
Welding Equipment
General Industrial Applications
Product Lifecycle
Current Product
Replacement and Upgrade Options Available
Key Reasons to Choose This Product
High Power, Voltage, and Current Capabilities
Low Conduction and Switching Losses
Fast Switching Performance
Wide Operating Temperature Range
Reliable and Robust Design
Compatibility with Standard IGBT Circuits
Suitable for a Variety of Power Electronic Applications