Manufacturer Part Number
STGB6NC60HDT4
Manufacturer
STMicroelectronics
Introduction
High-performance, high-voltage, single IGBT transistor
Product Features and Performance
High voltage rating up to 600V
Low on-state voltage
Fast switching speed
Low gate charge
Optimized for high-frequency, high-power applications
Product Advantages
Improved energy efficiency
Reduced switching losses
Compact and efficient power conversion
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 15A
On-State Voltage (Max): 2.5V @ 15V, 3A
Reverse Recovery Time: 21ns
Gate Charge: 13.6nC
Quality and Safety Features
RoHS3 compliant
D2PAK package for improved thermal performance
Compatibility
Suitable for a wide range of high-power, high-frequency applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Product Lifecycle
Currently in active production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent performance and efficiency for high-power, high-frequency applications
Compact and thermally efficient package
Proven reliability and quality from a trusted manufacturer
Availability of technical support and product lifecycle management