STGB7NC60HDT4 - STMicroelectronics

Manufacturer Part Number

STGB7NC60HDT4

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

Transistor IGBT Single

Product Features and Performance

RoHS3 Compliant

D2PAK Packaging

PowerMESH Series

Tape & Reel Packaging

Wide Operating Temperature Range: -55°C to 150°C

High Power Capability: 80W

High Breakdown Voltage: 600V

High Collector Current: 25A

Low On-State Voltage: 2.5V @ 15V, 7A

Fast Reverse Recovery Time: 37ns

Low Gate Charge: 35nC

High Pulsed Collector Current: 50A

Fast Switching Speed: Td(on) 18.5ns, Td(off) 72ns

Product Advantages

Optimized for high power and high efficiency applications

Excellent thermal performance

Robust and reliable design

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 600V

Collector Current (Max): 25A

Pulsed Collector Current (Max): 50A

On-State Voltage (Max): 2.5V @ 15V, 7A

Reverse Recovery Time: 37ns

Gate Charge: 35nC

Switching Times: Td(on) 18.5ns, Td(off) 72ns

Quality and Safety Features

RoHS3 Compliant

High-quality manufacturing process

Compatibility

Compatible with a wide range of high-power electronic applications

Application Areas

Suitable for high-power, high-efficiency applications such as:

- Motor drives

- Power supplies

- Welding equipment

- Induction heating

- Solar inverters

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Optimized for high power and high efficiency

Excellent thermal performance and reliability

Fast switching speed and low switching losses

Wide operating temperature range

RoHS3 compliance for environmental compatibility