STGD10NC60KDT4 - STMicroelectronics

Manufacturer Part Number

STGD10NC60KDT4

Manufacturer

STMicroelectronics

Introduction

High-performance IGBT transistor for power electronics applications

Product Features and Performance

600V collector-emitter breakdown voltage

20A collector current (max)

5V collector-emitter saturation voltage @ 15V gate, 5A collector

22ns reverse recovery time

19nC gate charge

30A pulsed collector current

55J turn-on, 85J turn-off switching energy

17ns turn-on, 72ns turn-off delay times

Product Advantages

Efficient power conversion with low losses

Compact and robust design

Reliable and durable performance

Key Technical Parameters

Voltage: 600V collector-emitter breakdown

Current: 20A collector (max), 30A pulsed

Switching times: 17ns turn-on, 72ns turn-off

Switching energy: 55J turn-on, 85J turn-off

Operating temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

DPAK package for surface mount

Compatibility

Compatible with a wide range of power electronics applications

Application Areas

Power converters

Motor drives

Inverters

Uninterruptible power supplies (UPS)

Welding equipment

Industrial automation

Product Lifecycle

Current production model, no known plans for discontinuation

Replacement or upgrade options available if required

Key Reasons to Choose This Product

High efficiency and low losses for improved system performance

Compact and robust design for reliable operation

Wide operating temperature range for versatile applications

RoHS3 compliance for environmental responsibility

Proven track record and technical support from STMicroelectronics