Manufacturer Part Number
STGD18N40LZT4
Manufacturer
STMicroelectronics
Introduction
IGBT (Insulated Gate Bipolar Transistor) power semiconductor device
Product Features and Performance
400V, 25A IGBT with integrated anti-parallel diode
Designed for automotive and industrial applications
Optimized for switching performance and efficiency
Low conduction and switching losses
Product Advantages
Robust and reliable design
Improved thermal management
Compact and space-saving package
Key Technical Parameters
Collector-Emitter Voltage: 420V
Collector Current: 25A
Collector-Emitter Saturation Voltage: 1.7V @ 4.5V, 10A
Gate Charge: 29nC
Switching Times: 650ns (turn-on), 13.5μs (turn-off)
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
Suitable for use in various power conversion and motor control applications
Application Areas
Automotive systems (e.g., electric power steering, electric brakes, hybrid/electric vehicles)
Industrial motor drives
Uninterruptible power supplies (UPS)
Switch-mode power supplies
Product Lifecycle
This product is currently in production and available
Replacement or upgrade options may be available from the manufacturer in the future
Key Reasons to Choose This Product
Optimized for high efficiency and performance in power conversion and motor control applications
Robust and reliable design suitable for demanding automotive and industrial environments
Compact DPAK package simplifies board layout and integration
AEC-Q101 qualification ensures automotive-grade quality and reliability