Manufacturer Part Number
STGD25N40LZAG
Manufacturer
STMicroelectronics
Introduction
The STGD25N40LZAG is a single Insulated Gate Bipolar Transistor (IGBT) designed for automotive applications.
Product Features and Performance
Automotive-grade IGBT with AEC-Q101 qualification
Operating temperature range of -55°C to 175°C (TJ)
Max power dissipation of 125W
Collector-emitter breakdown voltage (BVCES) of 435V
Collector current (IC) up to 25A
Low on-state voltage (VCE(on)) of 1.25V @ 4V, 6A
Fast switching with turn-on/off delay times of 1.1μs/4.6μs
Compact D-PAK (TO-252) surface mount package
Product Advantages
Automotive-grade reliability and qualification
High power density and efficiency
Fast switching for motor drive and power conversion applications
Small footprint D-PAK package for compact designs
Key Technical Parameters
Collector-Emitter Breakdown Voltage (BVCES): 435V
Collector Current (IC): 25A
On-State Voltage (VCE(on)): 1.25V @ 4V, 6A
Switching Times (Td(on/off)): 1.1μs/4.6μs
Gate Charge (Qg): 26nC
Power Dissipation (PD): 125W
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
Suitable for use in automotive and industrial applications requiring high-power, fast-switching IGBTs
Application Areas
Motor drives
Power converters
Automotive electronics
Industrial power electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacements or upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Automotive-grade reliability and qualification for harsh environments
High power density and efficiency for compact, high-performance designs
Fast switching capability for motor control and power conversion
Small footprint D-PAK package for space-constrained applications
Extensive technical parameters and documentation available for design support