STGD6M65DF2 - STMicroelectronics

Manufacturer Part Number

STGD6M65DF2

Manufacturer

STMicroelectronics

Introduction

This is a discrete semiconductor device, specifically a single Insulated Gate Bipolar Transistor (IGBT) in a DPAK package.

Product Features and Performance

Trench Field Stop IGBT technology

650V Collector-Emitter Breakdown Voltage

12A Collector Current (Max)

2V Collector-Emitter Saturation Voltage (Max) at 15V Gate-Emitter Voltage, 6A Collector Current

140ns Reverse Recovery Time

2nC Gate Charge

24A Pulsed Collector Current

36J Turn-On Switching Energy, 200J Turn-Off Switching Energy

15ns Turn-On Delay Time, 90ns Turn-Off Delay Time at 25°C

Product Advantages

Trench Field Stop IGBT technology for improved efficiency and ruggedness

Wide operating temperature range of -55°C to 175°C

High power handling capability up to 88W

Surface mount DPAK package for compact design

Key Technical Parameters

Voltage Rating: 650V Collector-Emitter Breakdown Voltage

Current Rating: 12A Collector Current (Max)

Switching Characteristics: 140ns Reverse Recovery Time, 36J Turn-On Switching Energy, 200J Turn-Off Switching Energy

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

DPAK package is a common surface mount power semiconductor package

Application Areas

Suitable for use in various power conversion and motor control applications, such as inverters, converters, and drives

Product Lifecycle

This product is an active and widely used IGBT device, with no indication of discontinuation or impending replacement.

Key Reasons to Choose This Product

Trench Field Stop IGBT technology for high efficiency and reliability

Wide operating temperature range of -55°C to 175°C for versatile applications

High power handling capability up to 88W for demanding power conversion needs

Compact DPAK surface mount package for space-constrained designs

Robust switching characteristics with low switching losses and fast switching times