Manufacturer Part Number
STGD7NB60ST4
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor IGBT
Product Features and Performance
RoHS3 Compliant
DPAK Package
PowerMESH Series
Tape & Reel Packaging
Operating Temperature up to 150°C
Power Rating up to 55W
Collector-Emitter Breakdown Voltage up to 600V
Collector Current up to 15A
Low Collector-Emitter Saturation Voltage of 1.6V
Gate Charge of 33nC
Pulsed Collector Current up to 60A
Fast Switching Characteristics (Turn-on/off Time ~700ns)
Product Advantages
Compact DPAK Surface Mount Package
High Power Density
Excellent Thermal Performance
Fast Switching Capability
Reliable Operation
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 15A
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 7A
Gate Charge: 33nC
Current Collector Pulsed (Icm): 60A
Switching Energy: 3.5mJ (off)
Td (on/off) @ 25°C: 700ns/-
Quality and Safety Features
RoHS3 Compliant
Reliable Operation up to 150°C
Compatibility
Surface Mount DPAK Package
Application Areas
Power Supplies
Motor Drives
Lighting Applications
Industrial Electronics
Product Lifecycle
Active Product
Replacements and Upgrades Available
Key Reasons to Choose
High Power Density
Fast Switching Capability
Reliable High Temperature Operation
Compact Surface Mount Package
RoHS Compliance