Manufacturer Part Number
STGD8NC60KDT4
Manufacturer
STMicroelectronics
Introduction
IGBT Transistor, Single
Product Features and Performance
Optimized for high-frequency switching applications
Fast switching speed and low switching losses
Low on-state voltage drop
High peak current capability
Robust avalanche capability
High junction temperature operation up to 150°C
Product Advantages
Improved energy efficiency
Reduced heat dissipation
Compact design
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (max): 15A
On-State Voltage Drop: 2.75V @ 15V, 3A
Reverse Recovery Time: 23.5ns
Gate Charge: 19nC
Pulse Collector Current: 30A
Quality and Safety Features
RoHS3 Compliant
Designed for high-reliability applications
Compatibility
Suitable for a wide range of power electronic applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Active product, no plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent high-frequency switching performance
Efficient power conversion with low losses
Reliable and robust design for demanding applications
Wide operating temperature range up to 150°C
Compact and space-saving DPAK package