Manufacturer Part Number
STGF10NB60SD
Manufacturer
STMicroelectronics
Introduction
Single IGBT Transistor
Product Features and Performance
Low conduction losses
Optimized switching performance
High current handling capability
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Efficient power conversion
Reliable and robust design
Versatile application suitability
Key Technical Parameters
Power Rating: 25W
Collector-Emitter Voltage (max): 600V
Collector Current (max): 23A
Collector-Emitter Saturation Voltage (max): 1.75V
Reverse Recovery Time: 37ns
Gate Charge: 33nC
Collector Current Pulse (max): 80A
Quality and Safety Features
ROHS3 compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Inverters
Motor drives
Power supplies
Industrial equipment
Renewable energy systems
Product Lifecycle
Currently in production
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High efficiency and low losses for improved system performance
Robust design and wide operating temperature range for reliability
Versatile application suitability for various power electronics projects
Compliance with RoHS regulations for environmental responsibility