Manufacturer Part Number
STGF19NC60WD
Manufacturer
STMicroelectronics
Introduction
STGF19NC60WD is a discrete semiconductor product, specifically an Insulated-Gate Bipolar Transistor (IGBT) in a single package.
Product Features and Performance
Operating temperature range: -55°C to 150°C (TJ)
Maximum power rating: 32 W
Collector-Emitter Breakdown Voltage (Max): 600 V
Maximum Collector Current (Ic): 14 A
Low Collector-Emitter Saturation Voltage (Vce(on)): 2.5 V @ 15 V, 12 A
Fast Reverse Recovery Time (trr): 31 ns
Gate Charge: 53 nC
Switching Energy: 81 J (on), 125 J (off)
Turn-on/off Delay Times (Td): 25 ns / 90 ns
Product Advantages
High voltage and current handling capabilities
Low conduction and switching losses
Fast switching performance
Reliable and robust design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 14 A
Vce(on) (Max) @ Vge, Ic: 2.5 V @ 15 V, 12 A
Reverse Recovery Time (trr): 31 ns
Gate Charge: 53 nC
Switching Energy: 81 J (on), 125 J (off)
Turn-on/off Delay Times (Td): 25 ns / 90 ns
Quality and Safety Features
RoHS3 compliant
TO-220FP package for reliable and safe operation
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power converters
Product Lifecycle
Currently available
No information on upcoming discontinuation or replacements
Several Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding applications
Low conduction and switching losses for improved energy efficiency
Fast switching performance for high-speed power conversion
Reliable and robust design for long-term, safe operation
RoHS3 compliance for environmentally friendly use