STGF15M65DF2 - STMicroelectronics

Manufacturer Part Number

STGF15M65DF2

Manufacturer

STMicroelectronics

Introduction

Single IGBT (Insulated Gate Bipolar Transistor) device

Product Features and Performance

Trench Field Stop IGBT technology

High voltage (650V) and high current (30A) handling capability

Low on-state voltage (Vce(on) of 2V @ 15V, 15A)

Fast switching (Td(on/off) of 24ns/93ns)

Low switching energy (90μJ on, 450μJ off)

Wide operating temperature range (-55°C to 175°C)

Product Advantages

High efficiency due to low conduction and switching losses

Reliable performance in high-power applications

Compact and easy to integrate design

Key Technical Parameters

Collector-Emitter Breakdown Voltage (BVCEO): 650V

Collector Current (IC): 30A (max)

Pulsed Collector Current (ICM): 60A

On-State Voltage (VCE(on)): 2V @ 15V, 15A

Reverse Recovery Time (trr): 142ns

Quality and Safety Features

RoHS3 compliant

TO-220FP package for reliable thermal management

Compatibility

Suitable for a wide range of high-power industrial and consumer electronics applications

Application Areas

Motor drives

Power supplies

Inverters

Welding equipment

Industrial automation

Product Lifecycle

This product is currently in production and is not nearing discontinuation.

Replacement or upgraded products may be available in the future as technology evolves.

Key Reasons to Choose This Product

Excellent performance and efficiency due to advanced IGBT technology

Reliable and robust design for demanding high-power applications

Wide operating temperature range for versatile use

Compact and easy to integrate package

RoHS3 compliance for environmental responsibility