STGF20H60DF - STMicroelectronics

Manufacturer Part Number

STGF20H60DF

Manufacturer

STMicroelectronics

Introduction

High power discrete semiconductor product

Trench Field Stop IGBT designed for industrial applications

Product Features and Performance

600V collector-emitter breakdown voltage

40A collector current rating

Low Vce(on) of 2V at 15V gate voltage and 20A collector current

Fast switching with 90ns reverse recovery time

115nC gate charge

80A pulsed collector current

Wide operating temperature range of -55°C to 175°C

Product Advantages

Excellent performance for industrial motor drives and power conversion applications

Robust design with high power density

Fast switching for improved energy efficiency

Key Technical Parameters

IGBT Type: Trench Field Stop

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 40A

Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A

Reverse Recovery Time (trr): 90ns

Gate Charge: 115nC

Current Collector Pulsed (Icm): 80A

Switching Energy: 209J (on), 261J (off)

Td (on/off) @ 25°C: 42.5ns/177ns

Quality and Safety Features

RoHS3 compliant

Wide operating temperature range up to 175°C

Compatibility

TO-220-3 package compatible

Suitable for industrial motor drives and power conversion applications

Application Areas

Industrial motor drives

Power conversion systems

Welding equipment

Induction heating

Solar inverters

Product Lifecycle

Actively supported product

No indication of discontinuation

Key Reasons to Choose This Product

Excellent performance and power density for industrial applications

Fast switching for improved energy efficiency

Robust and reliable design with wide operating temperature range

RoHS3 compliance for environmental sustainability

Broad compatibility with industrial systems