Manufacturer Part Number
STGF20NB60S
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor IGBT
Product Features and Performance
RoHS3 Compliant
TO-220FP Package
PowerMESH Series
Operating Temperature: -55°C ~ 150°C (TJ)
Power Rating: 40 W
Collector-Emitter Breakdown Voltage: 600 V
Collector Current (Max): 24 A
Collector-Emitter Saturation Voltage (Max): 1.7 V @ 15 V, 20 A
Gate Charge: 83 nC
Pulsed Collector Current: 70 A
Switching Energy: 840 μJ (on), 7.4 mJ (off)
Turn-on/off Delay Time: 92 ns / 1.1 μs
Product Advantages
High voltage and current capability
Low conduction and switching losses
Robust and reliable performance
Key Technical Parameters
Voltage Rating: 600 V
Current Rating: 24 A
Saturation Voltage: 1.7 V
Switching Characteristics
Quality and Safety Features
RoHS3 Compliant
Suitable for high-power, high-voltage applications
Compatibility
Compatible with various high-power electronic systems and circuits
Application Areas
Inverters
Converters
Motor drives
Power supplies
Industrial electronics
Product Lifecycle
Current production model
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High voltage and current capability for demanding applications
Excellent conduction and switching performance
Robust and reliable design for long-term operation
RoHS compliance for environmental considerations
Compatibility with a wide range of high-power electronic systems