Manufacturer Part Number
STGFW20V60DF
Manufacturer
STMicroelectronics
Introduction
Discrete semiconductor product
Single insulated-gate bipolar transistor (IGBT)
Product Features and Performance
Trench field stop IGBT technology
Maximum collector-emitter voltage: 600V
Maximum collector current: 40A
Low on-state voltage drop: 2.2V @ 15V, 20A
Fast reverse recovery time: 40ns
High power density: 52W maximum power
Product Advantages
Improved efficiency and reduced power losses
Compact and robust design
Suitable for high-power switching applications
Key Technical Parameters
Collector-emitter breakdown voltage: 600V
Collector current (max): 40A
Collector-emitter saturation voltage: 2.2V
Reverse recovery time: 40ns
Gate charge: 116nC
Quality and Safety Features
RoHS3 compliant
Wide operating temperature range: -55°C to 175°C
Compatibility
TO-3P-3 full pack package
Through-hole mounting
Application Areas
High-power switch-mode power supplies
Motor drives
Welding equipment
Induction heating systems
Product Lifecycle
Current production part
Replacement and upgrade options available
Key Reasons to Choose This Product
High efficiency and low power losses
Fast switching capability
Robust and reliable performance
Suitability for high-power applications
Wide operating temperature range