STGFW40V60DF - STMicroelectronics

Manufacturer Part Number

STGFW40V60DF

Manufacturer

STMicroelectronics

Introduction

High voltage, high current IGBT (Insulated Gate Bipolar Transistor) device

Product Features and Performance

Trench Field Stop IGBT technology

Voltage rating up to 600V

Current rating up to 80A

Low on-state voltage drop

Fast switching speed

Low switching losses

Wide operating temperature range (-55°C to 175°C)

Product Advantages

Excellent performance for high power switching applications

Reliable and robust design

Suitable for harsh environments

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 600V

Collector Current (max): 80A

On-state Voltage Drop (max): 2.3V @ 15V, 40A

Reverse Recovery Time: 41ns

Gate Charge: 226nC

Switching Energy: 456μJ (on), 411μJ (off)

Quality and Safety Features

RoHS3 compliant

Suitable for safety-critical applications

Compatibility

Can be used as a replacement or upgrade for similar IGBT devices

Application Areas

High power switching applications, such as motor drives, inverters, and power supplies

Industrial equipment

Renewable energy systems

Product Lifecycle

Currently in production

No plans for discontinuation

Replacement options available if needed

Several Key Reasons to Choose This Product

High performance and reliability

Wide operating temperature range

Fast switching speed and low switching losses

Suitable for harsh environments and safety-critical applications

Availability of replacement options