STGF7H60DF - STMicroelectronics

Manufacturer Part Number

STGF7H60DF

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

Transistors IGBTs Single

Product Features and Performance

Trench Field Stop IGBT technology

High power density

Low conduction and switching losses

Fast switching speed

Product Advantages

Optimized for industrial and consumer applications

Excellent reliability and ruggedness

Compact and efficient design

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600 V

Current Collector (Ic) (Max): 14 A

Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A

Reverse Recovery Time (trr): 136 ns

Gate Charge: 46 nC

Current Collector Pulsed (Icm): 28 A

Switching Energy: 99J (on), 100J (off)

Td (on/off) @ 25°C: 30ns/160ns

Quality and Safety Features

RoHS3 Compliant

Operating Temperature: -55°C ~ 175°C (TJ)

Power Max: 24 W

Compatibility

Mounting Type: Through Hole

Supplier Device Package: TO-220FP

Package: Tube

Application Areas

Industrial and consumer applications requiring high power density, efficiency, and reliability

Product Lifecycle

Active product

Replacements and upgrades available

Key Reasons to Choose This Product

Optimized Trench Field Stop IGBT technology for high performance

Excellent reliability and ruggedness for industrial and consumer applications

Compact and efficient design with low conduction and switching losses

Fast switching speed and high power density