Manufacturer Part Number
STGF7H60DF
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistors IGBTs Single
Product Features and Performance
Trench Field Stop IGBT technology
High power density
Low conduction and switching losses
Fast switching speed
Product Advantages
Optimized for industrial and consumer applications
Excellent reliability and ruggedness
Compact and efficient design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 14 A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Reverse Recovery Time (trr): 136 ns
Gate Charge: 46 nC
Current Collector Pulsed (Icm): 28 A
Switching Energy: 99J (on), 100J (off)
Td (on/off) @ 25°C: 30ns/160ns
Quality and Safety Features
RoHS3 Compliant
Operating Temperature: -55°C ~ 175°C (TJ)
Power Max: 24 W
Compatibility
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package: Tube
Application Areas
Industrial and consumer applications requiring high power density, efficiency, and reliability
Product Lifecycle
Active product
Replacements and upgrades available
Key Reasons to Choose This Product
Optimized Trench Field Stop IGBT technology for high performance
Excellent reliability and ruggedness for industrial and consumer applications
Compact and efficient design with low conduction and switching losses
Fast switching speed and high power density
STGIB10CH60TSSTM