Manufacturer Part Number
STGFW40H65FB
Manufacturer
STMicroelectronics
Introduction
High-power Insulated Gate Bipolar Transistor (IGBT) for industrial applications
Product Features and Performance
Trench field stop IGBT technology
Low on-state voltage, high switching speed
High current handling capability up to 80A
High voltage rating up to 650V
Low gate charge of 210nC
Fast switching with turn-on/off time of 40ns/142ns
Product Advantages
Efficient power conversion
Compact design
Reliable performance
Key Technical Parameters
Operating temperature range: -55°C to 175°C
Power rating: 62.5W
Collector-emitter breakdown voltage: 650V
Collector current (max): 80A
Collector-emitter saturation voltage: 2V @ 15V, 40A
Quality and Safety Features
RoHS3 compliant
Robust TO-3PF-3 package
Compatibility
Suitable for various industrial applications, such as motor drives, power supplies, and inverters
Application Areas
Industrial electronics
Power conversion systems
Motor control
Product Lifecycle
Current model, no discontinuation or replacement planned
Several Key Reasons to Choose This Product
High power handling and voltage capability
Fast switching speed for efficient power conversion
Compact and robust package design
Reliable performance in industrial environments
RoHS compliance for environmental sustainability