STGF3NC120HD - STMicroelectronics

Manufacturer Part Number

STGF3NC120HD

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

Transistor IGBT Single

Product Features and Performance

RoHS3 Compliant

TO-220FP Package

PowerMESH Series

Operating Temperature: -55°C to 150°C

Power Rating: 25W

Collector-Emitter Breakdown Voltage: 1200V

Collector Current (Max): 6A

Collector-Emitter Saturation Voltage: 2.8V @ 15V, 3A

Reverse Recovery Time: 51ns

Gate Charge: 24nC

Collector Current (Pulsed): 20A

Switching Energy: 236μJ (on), 290μJ (off)

Turn-on/off Delay Time: 15ns/118ns

Product Advantages

High breakdown voltage

Low on-state resistance

Fast switching speed

Robust design

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 1200V

Current Collector (Ic) (Max): 6A

Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A

Reverse Recovery Time (trr): 51ns

Gate Charge: 24nC

Current Collector Pulsed (Icm): 20A

Switching Energy: 236μJ (on), 290μJ (off)

Td (on/off) @ 25°C: 15ns/118ns

Quality and Safety Features

RoHS3 Compliant

Compatibility

TO-220-3 Full Pack

Application Areas

Suitable for various power electronic applications, such as motor drives, power supplies, and switching power converters

Product Lifecycle

Current product, no information on discontinuation or availability of replacements/upgrades

Key Reasons to Choose This Product

High breakdown voltage up to 1200V

Low on-state resistance for improved efficiency

Fast switching speed for high-frequency applications

Robust design for reliable operation

RoHS3 compliance for environmental considerations