Manufacturer Part Number
STGD5H60DF
Manufacturer
STMicroelectronics
Introduction
Single IGBT transistor
Product Features and Performance
Trench Field Stop IGBT technology
Low on-state voltage
Fast switching speed
Low gate charge
High avalanche energy capability
Optimized for high frequency switching applications
Product Advantages
Improved efficiency
Reduced power losses
Compact design
Key Technical Parameters
Collector-Emitter Voltage: 600V
Collector Current: 10A
On-state Voltage: 1.95V @ 15V, 5A
Reverse Recovery Time: 134.5ns
Gate Charge: 43nC
Pulsed Collector Current: 20A
Operating Temperature: -55°C to 175°C
Quality and Safety Features
RoHS3 compliant
Reliable trench field stop IGBT design
Compatibility
Suitable for high-frequency switching applications
Application Areas
Induction heating
Switch mode power supplies
Motor drives
Welding equipment
Uninterruptible power supplies (UPS)
Product Lifecycle
Currently available, no discontinuation plans
Several Key Reasons to Choose This Product
Excellent efficiency and low power losses
Fast switching speed for high-frequency operation
Compact DPAK package for space-constrained designs
Wide operating temperature range
Reliable and safe IGBT design