Manufacturer Part Number
STGD4M65DF2
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistors IGBTs Single
Product Features and Performance
ROHS3 Compliant
DPAK package
Trench Field Stop IGBT technology
Operating temperature range: -55°C to 175°C
Maximum power: 68W
Collector-Emitter breakdown voltage: 650V
Maximum collector current: 8A
Low on-state voltage: 2.1V @ 15V, 4A
Fast reverse recovery time: 133ns
Low gate charge: 15.2nC
High pulsed collector current: 16A
Fast switching speed: 12ns (turn-on), 86ns (turn-off)
Product Advantages
Efficient power conversion
Compact DPAK surface-mount package
Wide operating temperature range
Robust and reliable performance
Key Technical Parameters
Voltage: 650V
Current: 8A continuous, 16A pulsed
On-state voltage: 2.1V
Reverse recovery time: 133ns
Gate charge: 15.2nC
Switching speeds: 12ns (turn-on), 86ns (turn-off)
Quality and Safety Features
ROHS3 compliant
Suitable for harsh environments
Compatibility
Can be used in a variety of power conversion and motor control applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial equipment
Product Lifecycle
Currently available
No indication of discontinuation or replacement
Key Reasons to Choose This Product
Efficient power conversion with low losses
Compact and robust DPAK package
Wide operating temperature range
Fast and reliable switching performance
Suitable for a variety of power conversion and motor control applications
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