Manufacturer Part Number
STGD3HF60HDT4
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistor IGBT Single
Product Features and Performance
ROHS3 Compliant
DPAK Package
Operating Temperature: -55°C to 150°C
Power Rating: 38W
Collector-Emitter Breakdown Voltage: 600V
Collector Current: 7.5A
Collector-Emitter Saturation Voltage: 2.95V @ 15V, 1.5A
Reverse Recovery Time: 85ns
Gate Charge: 12nC
Pulsed Collector Current: 18A
Switching Energy: 19J (on), 12J (off)
Turn-on/-off Delay Time: 11ns/60ns
Product Advantages
High voltage and current capability
Fast switching performance
Compact DPAK package
Key Technical Parameters
Voltage Rating: 600V
Current Rating: 7.5A
Switching Characteristics: Reverse Recovery Time, Gate Charge, Switching Energy, Turn-on/-off Delay Time
Quality and Safety Features
ROHS3 Compliant
Suitable for high temperature operation up to 150°C
Compatibility
Surface Mount Packaging
Application Areas
Power supplies
Inverters
Motor drives
Industrial electronics
Product Lifecycle
Current production model
Replacement/upgrade options available
Key Reasons to Choose
High voltage and current capability
Fast switching performance
Compact DPAK package
ROHS3 compliance
Suitable for high temperature applications