Manufacturer Part Number
STGD10HF60KD
Manufacturer
STMicroelectronics
Introduction
Single IGBT Transistor
Product Features and Performance
AEC-Q101 Qualified for Automotive Applications
-55°C to 150°C Operating Temperature Range
5W Maximum Power Dissipation
600V Collector-Emitter Breakdown Voltage
18A Maximum Collector Current
75V Collector-Emitter Saturation Voltage at 5A
50ns Reverse Recovery Time
23nC Gate Charge
30A Maximum Pulsed Collector Current
5ns Turn-On, 87ns Turn-Off Delay Times
Product Advantages
Suitable for Automotive Applications
Wide Operating Temperature Range
High Power Handling Capability
Low Saturation Voltage
Fast Switching Performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 18A
Collector-Emitter Saturation Voltage: 2.75V @ 5A
Reverse Recovery Time: 50ns
Gate Charge: 23nC
Pulsed Collector Current: 30A
Switching Times: 9.5ns (Turn-On), 87ns (Turn-Off)
Quality and Safety Features
AEC-Q101 Qualified
RoHS3 Compliant
Compatibility
Surface Mount Package (DPAK)
Suitable for Automotive and Industrial Applications
Application Areas
Automotive Electronics
Industrial Motor Drives
Power Supplies
Inverters
Converters
Product Lifecycle
Currently in Production
No Discontinuation Planned
Replacement/Upgrade Parts Available
Key Reasons to Choose This Product
Automotive-Grade Quality and Reliability
Wide Operating Temperature Range
High Power Handling Capability
Low Saturation Voltage for Efficient Operation
Fast Switching Performance for High-Frequency Applications
Availability of Replacement and Upgrade Options