Manufacturer Part Number
STGB40H65FB
Manufacturer
STMicroelectronics
Introduction
High-performance trench field-stop IGBT for industrial and consumer applications
Product Features and Performance
High breakdown voltage of 650V
Maximum collector current of 80A
Low on-state voltage drop of 2V at 40A
Fast turn-on and turn-off times of 40ns and 142ns respectively
High switching energy efficiency with 498J turn-on energy and 363J turn-off energy
Wide operating temperature range of -55°C to 175°C
Product Advantages
Optimized for high-power, high-efficiency applications
Robust design with high short-circuit capability
Excellent thermal performance
Key Technical Parameters
IGBT Type: Trench Field Stop
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 80A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Gate Charge: 210nC
Current Collector Pulsed (Icm): 160A
Switching Energy: 498J (on), 363J (off)
Td (on/off) @ 25°C: 40ns/142ns
Quality and Safety Features
ROHS3 compliant
Robust package design (DPAK) for reliable operation
Compatibility
Surface mount packaging (DPAK) for easy integration into various industrial and consumer applications
Application Areas
Suitable for high-power industrial and consumer applications, such as motor drives, power supplies, welding equipment, and household appliances
Product Lifecycle
This product is an active and widely used IGBT device from STMicroelectronics. There are no plans for discontinuation, and replacement or upgraded versions may be available in the future.
Key Reasons to Choose This Product
Excellent performance characteristics, including high breakdown voltage, high current capability, low on-state voltage, and fast switching times
Robust design and wide operating temperature range, ensuring reliable operation in demanding applications
Optimized for high-power, high-efficiency applications, making it a suitable choice for industrial and consumer power electronics
Surface mount packaging for easy integration and compatibility with various circuit designs