IXXH30N60B3D1 - IXYS

Manufacturer Part Number

IXXH30N60B3D1

Manufacturer

IXYS Corporation

Introduction

High-performance insulated gate bipolar transistor (IGBT) for industrial and power electronics applications.

Product Features and Performance

600V collector-emitter breakdown voltage

60A collector current rating

Low on-state voltage (Vce(on)) of 1.85V at 24A

Fast reverse recovery time (trr) of 25ns

Low switching losses with 550J turn-on and 500J turn-off energy

Wide operating temperature range of -55°C to 175°C

Product Advantages

Optimized for high-efficiency power conversion

Suitable for high-power, high-frequency switching applications

Robust design with high ruggedness and reliability

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 60A

Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A

Reverse Recovery Time (trr): 25ns

Gate Charge: 39nC

Current Collector Pulsed (Icm): 115A

Switching Energy: 550J (on), 500J (off)

Td (on/off) @ 25°C: 23ns/97ns

Quality and Safety Features

RoHS3 compliant

Meets industrial safety and reliability standards

Compatibility

Suitable for a wide range of industrial and power electronics applications, including motor drives, power supplies, and power conversion systems.

Application Areas

Industrial motor drives

Power supplies

Uninterruptible power supplies (UPS)

Renewable energy systems

Electric vehicles

Induction heating

Product Lifecycle

This product is an active and widely available IGBT from IXYS Corporation. There are no plans for discontinuation, and replacement or upgraded options are readily available.

Key Reasons to Choose This Product

High efficiency and low losses for improved system performance

Fast switching capability for high-frequency applications

Robust design and wide operating temperature range for reliability

Compatibility with a broad range of industrial and power electronics applications

Availability and support from a reputable manufacturer, IXYS Corporation