Manufacturer Part Number
IXXH30N60B3D1
Manufacturer
IXYS Corporation
Introduction
High-performance insulated gate bipolar transistor (IGBT) for industrial and power electronics applications.
Product Features and Performance
600V collector-emitter breakdown voltage
60A collector current rating
Low on-state voltage (Vce(on)) of 1.85V at 24A
Fast reverse recovery time (trr) of 25ns
Low switching losses with 550J turn-on and 500J turn-off energy
Wide operating temperature range of -55°C to 175°C
Product Advantages
Optimized for high-efficiency power conversion
Suitable for high-power, high-frequency switching applications
Robust design with high ruggedness and reliability
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 60A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Reverse Recovery Time (trr): 25ns
Gate Charge: 39nC
Current Collector Pulsed (Icm): 115A
Switching Energy: 550J (on), 500J (off)
Td (on/off) @ 25°C: 23ns/97ns
Quality and Safety Features
RoHS3 compliant
Meets industrial safety and reliability standards
Compatibility
Suitable for a wide range of industrial and power electronics applications, including motor drives, power supplies, and power conversion systems.
Application Areas
Industrial motor drives
Power supplies
Uninterruptible power supplies (UPS)
Renewable energy systems
Electric vehicles
Induction heating
Product Lifecycle
This product is an active and widely available IGBT from IXYS Corporation. There are no plans for discontinuation, and replacement or upgraded options are readily available.
Key Reasons to Choose This Product
High efficiency and low losses for improved system performance
Fast switching capability for high-frequency applications
Robust design and wide operating temperature range for reliability
Compatibility with a broad range of industrial and power electronics applications
Availability and support from a reputable manufacturer, IXYS Corporation