Manufacturer Part Number
IXXH60N65B4H1
Manufacturer
IXYS Corporation
Introduction
High-performance insulated-gate bipolar transistor (IGBT) for industrial applications
Product Features and Performance
650V collector-emitter voltage rating
116A collector current rating
380W power rating
Fast switching speed with reverse recovery time of 150ns
Low On-state voltage drop of 2V @ 15V, 60A
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent switching performance
High power density
Reliable and robust design
Suitable for a wide range of industrial applications
Key Technical Parameters
IGBT type: PT (punch-through)
Collector-emitter breakdown voltage: 650V
Collector current (max): 116A
On-state voltage drop: 2V @ 15V, 60A
Reverse recovery time: 150ns
Gate charge: 95nC
Collector current (pulsed): 230A
Quality and Safety Features
RoHS3 compliant
Housed in a reliable TO-247-3 package
Compatibility
Suitable for a variety of industrial applications, such as motor drives, power supplies, and inverters
Application Areas
Industrial equipment
Power electronics
Motor control systems
Renewable energy systems
Welding equipment
Product Lifecycle
The product is currently available and not nearing discontinuation.
Replacement or upgraded models may be available in the future.
Key Reasons to Choose This Product
Excellent switching performance and high power density
Wide operating temperature range and reliable design
Suitable for a broad range of industrial applications
RoHS3 compliance for environmental sustainability
Availability of technical support and long-term product availability from IXYS Corporation