IXXH30N60C3D1 - IXYS

Manufacturer Part Number

IXXH30N60C3D1

Manufacturer

IXYS Corporation

Introduction

High-performance IGBT (Insulated Gate Bipolar Transistor) designed for high-power, high-efficiency applications.

Product Features and Performance

High power rating of 270W

High voltage capability up to 600V

High current handling up to 60A continuous, 110A pulsed

Fast switching with turn-on/off times of 23ns/77ns

Low conduction loss with Vce(on) of 2.3V at 24A

Short reverse recovery time of 25ns

Product Advantages

Optimized for high-frequency, high-efficiency power conversion

Excellent thermal performance and reliability

Robust design for demanding applications

Compliant with RoHS3 regulations

Key Technical Parameters

IGBT Type: PT (Punch-Through)

Voltage Rating: 600V

Current Rating: 60A continuous, 110A pulsed

Vce(on): 2.3V @ 15V, 24A

Reverse Recovery Time: 25ns

Gate Charge: 37nC

Operating Temperature: -55°C to 175°C

Quality and Safety Features

RoHS3 compliant

Robust TO-247 package for reliable performance

Compatibility

Suitable for a wide range of high-power, high-efficiency applications such as motor drives, power supplies, and inverters.

Application Areas

Industrial automation

Renewable energy systems

Electric vehicles

Power electronics

Product Lifecycle

This product is currently available and is not nearing discontinuation.

Replacement or upgraded models may become available in the future as technology advances.

Key Reasons to Choose This Product

High power handling and efficiency for demanding applications

Fast switching and low conduction losses for improved system performance

Robust and reliable design for long-term operation

RoHS3 compliance for environmentally-conscious applications

Broad compatibility and suitability for a wide range of industries and use cases