Manufacturer Part Number
STGWT30H60DFB
Manufacturer
STMicroelectronics
Introduction
This product is a discrete semiconductor device, specifically a single transistor IGBT (Insulated Gate Bipolar Transistor).
Product Features and Performance
Trench Field Stop IGBT technology
High power handling capability up to 260W
Low Vce(on) of 2V @ 15V, 30A
Fast switching with Td(on/off) of 37ns/146ns
Low switching energy of 383J (on) and 293J (off)
Wide operating temperature range of -55°C to 175°C
Product Advantages
Efficient power conversion and control
Compact and robust TO-3P package
Suitable for a variety of high-power applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 60A
Collector Current (Pulsed): 120A
Reverse Recovery Time: 53ns
Quality and Safety Features
RoHS3 compliant
Reliable through-hole mounting
Compatibility
This IGBT device is compatible with various high-power electronic circuits and systems.
Application Areas
Motor drives
Power supplies
Inverters
Industrial control systems
Product Lifecycle
The STGWT30H60DFB is an active product in STMicroelectronics' portfolio. Replacements or upgrades may be available in the future.
Key Reasons to Choose This Product
High power handling capability
Efficient and fast switching performance
Compact and reliable package
Wide operating temperature range
Compliance with RoHS regulations
Suitability for a variety of high-power applications
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