Manufacturer Part Number
STGWT20H65FB
Manufacturer
STMicroelectronics
Introduction
The STGWT20H65FB is a high-performance Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics, designed for use in a variety of power electronic applications.
Product Features and Performance
Trench Field Stop IGBT technology
Voltage rating of 650V
Current rating of 40A
Low on-state voltage drop (Vce(on)) of 2V at 15V, 20A
Fast switching with turn-on/off times of 30ns/139ns
High power handling capability up to 168W
Product Advantages
Excellent efficiency and reliability
Robust design for harsh environments
Efficient heat dissipation
Compact size and easy integration
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 650V
Collector Current (Max): 40A
Collector Current Pulsed (Max): 80A
Gate Charge: 120nC
Switching Energy: 77J (on), 170J (off)
Quality and Safety Features
RoHS3 compliant
Suitable for use in harsh environments with an operating temperature range of -55°C to 175°C
Compatibility
Through-hole mounting in TO-3P package
Application Areas
Power conversion and motor control applications
Inverters, converters, and other power electronics
Product Lifecycle
This product is currently in production and available for purchase.
Replacement or upgrade options may be available in the future as technology advances.
Several Key Reasons to Choose This Product
High performance and efficiency with Trench Field Stop IGBT technology
Robust design for reliable operation in harsh environments
Compact size and easy integration into power electronics systems
Excellent thermal management capabilities for high power handling
Fast switching and low on-state voltage drop for improved system efficiency