Manufacturer Part Number
STGWA80H65DFB
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Products
Transistors - IGBTs - Single
Product Features and Performance
ROHS3 Compliant
TO-247 Long Leads package
Trench Field Stop IGBT technology
650V Collector-Emitter Breakdown Voltage
120A Collector Current
2V Collector-Emitter Saturation Voltage @ 15V, 80A
85ns Reverse Recovery Time
414nC Gate Charge
240A Pulsed Collector Current
1mJ Turn-on, 1.5mJ Turn-off Switching Energy
84ns Turn-on, 280ns Turn-off Delay Time
Operating Temperature: -55°C to 175°C
Product Advantages
High power density
High efficiency
Fast switching
Robust and reliable
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 120A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Reverse Recovery Time (trr): 85ns
Gate Charge: 414nC
Current Collector Pulsed (Icm): 240A
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Td (on/off) @ 25°C: 84ns/280ns
Quality and Safety Features
ROHS3 Compliant
TO-247 Long Leads package
Trench Field Stop IGBT technology for reliability
Compatibility
Through Hole mounting
Application Areas
Power conversion and control
Motor drives
Renewable energy systems
Welding equipment
Induction heating
UPS systems
Product Lifecycle
Currently available
No information on upcoming discontinuation
Replacement or upgrade parts available
Several Key Reasons to Choose This Product
High power density and efficiency
Fast switching performance
Robust and reliable design
Wide operating temperature range
Compatibility with through-hole mounting
Suitable for a variety of power conversion and control applications
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