Manufacturer Part Number
STGWA40M120DF3
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor IGBT
Product Features and Performance
Trench Field Stop IGBT
High Voltage Capability: 1200V Collector-Emitter Breakdown Voltage
High Current Capability: 80A Collector Current (Max)
Low Voltage Drop: 2.3V Collector-Emitter Saturation Voltage @ 15V, 40A
Fast Switching: 35ns Turn-On Delay, 140ns Turn-Off Delay
Low Switching Losses: 1.03mJ Turn-On, 480μJ Turn-Off
Product Advantages
Suitable for high power, high efficiency applications
Robust design with high ruggedness
Fast switching capability for improved system efficiency
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 80A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Reverse Recovery Time (trr): 355ns
Gate Charge: 125nC
Current Collector Pulsed (Icm): 160A
Switching Energy: 1.03mJ (on), 480μJ (off)
Td (on/off) @ 25°C: 35ns/140ns
Quality and Safety Features
RoHS3 Compliant
Operating Temperature Range: -55°C to 175°C
Compatibility
TO-247 Long Leads Package
Through Hole Mounting
Application Areas
Industrial motor drives
Power supplies
Induction heating
Welding equipment
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
Current production, no known plans for discontinuation
Replacements and upgrades available from STMicroelectronics
Key Reasons to Choose This Product
High voltage and current capability for high power applications
Fast switching and low losses for improved system efficiency
Robust and reliable design for demanding operating conditions
Wide operating temperature range for versatile use
Compatibility with standard TO-247 package and through-hole mounting
