Manufacturer Part Number
STGWA40H120DF2
Manufacturer
STMicroelectronics
Introduction
High-performance IGBT power transistor for industrial and consumer applications
Product Features and Performance
Trench field stop technology
Low on-state voltage
Fast switching speed
High power density
Robust and reliable design
Product Advantages
Improved efficiency
Reduced switching losses
Compact and space-saving design
Excellent thermal performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 80 A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Reverse Recovery Time (trr): 488 ns
Gate Charge: 158 nC
Current Collector Pulsed (Icm): 160 A
Switching Energy: 1mJ (on), 1.32mJ (off)
Td (on/off) @ 25°C: 18ns/152ns
Quality and Safety Features
RoHS3 compliant
Robust and reliable design
Compatibility
Through-hole mounting
Standard input type
Application Areas
Industrial and consumer applications
Motor drives
Power supplies
Inverters
Switch-mode power supplies
Product Lifecycle
Current product offering
No discontinuation planned
Replacements and upgrades available
Several Key Reasons to Choose This Product
High efficiency and low switching losses
Compact and space-saving design
Excellent thermal performance
Robust and reliable design
Compatibility with various industrial and consumer applications