Manufacturer Part Number
STGWA40H65DFB2
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Trench Field Stop IGBT Transistor
Product Features and Performance
Voltage Collector-Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 72A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Reverse Recovery Time (trr): 75ns
Gate Charge: 153nC
Current Collector Pulsed (Icm): 160A
Switching Energy: 765μJ (on), 410μJ (off)
Turn-on/off Delay Time (Td) @ 25°C: 18ns/72ns
Power Rating: 230W
Operating Temperature: -55°C to 175°C (TJ)
Product Advantages
High efficiency
Fast switching speed
High power density
Robust design
Key Technical Parameters
IGBT Type: Trench Field Stop
Package: TO-247-3
Mounting Type: Through Hole
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for various power conversion and motor control applications
Application Areas
Industrial motor drives
Uninterruptible power supplies (UPS)
Renewable energy systems
Power factor correction (PFC) circuits
Welding equipment
Induction heating systems
Product Lifecycle
Currently available
No information on upcoming discontinuation or replacement models
Key Reasons to Choose This Product
High power and voltage handling capability
Fast switching performance
Robust design for reliable operation
RoHS compliance for environmental considerations
Wide range of industrial and power electronics applications