Manufacturer Part Number
STGWA40IH65DF
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistor IGBT Single
Product Features and Performance
RoHS3 Compliant
TO-247 Long Leads Package
Trench Field Stop IGBT Technology
Operating Temperature Range: -55°C to 175°C
Power Rating: 238W
Collector-Emitter Breakdown Voltage: 650V
Collector Current (Max): 80A
Collector-Emitter Saturation Voltage (Max): 2V @ 15V, 40A
Gate Charge: 114nC
Pulsed Collector Current: 120A
Turn-Off Time: 210ns
Product Advantages
High power density
Efficient operation
Wide temperature range
Key Technical Parameters
IGBT Type: Trench Field Stop
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Max): 80A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Gate Charge: 114nC
Current Collector Pulsed (Max): 120A
Quality and Safety Features
RoHS3 Compliant
Compatibility
Through Hole Mounting
Application Areas
Inverters
Converters
Motor Drives
Power Supplies
Product Lifecycle
Current product, no indication of discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High power capability
Efficient performance
Wide operating temperature range
Robust trench field stop IGBT technology
RoHS3 compliance for environmental sustainability