Manufacturer Part Number
STGWA30N120KD
Manufacturer
STMicroelectronics
Introduction
High-performance single IGBT transistor
Product Features and Performance
High power handling capability of up to 220W
High voltage rating up to 1200V
High current rating up to 60A
Fast switching with low conduction losses
Low gate charge of 105nC
Wide operating temperature range of -55°C to 125°C
Product Advantages
Optimized for high-frequency and high-efficiency applications
Reliable and robust design
Compact and efficient power conversion
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 1200V
Collector Current (max): 60A
Collector-Emitter Saturation Voltage (max): 3.85V
Reverse Recovery Time: 84ns
Switching Energy: 2.4mJ (on), 4.3mJ (off)
Switching Times: 36ns (on), 251ns (off)
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Designed for through-hole mounting in TO-247 package
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Solar inverters
Product Lifecycle
This product is currently in production and available for purchase.
Replacement or upgrade options may be available in the future.
Key Reasons to Choose This Product
Excellent power handling capability for high-power applications
Fast and efficient switching performance
Reliable and robust design for industrial environments
Wide operating temperature range for diverse applications
RoHS compliance for environmentally-friendly use
