Manufacturer Part Number
STGWA15M120DF3
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-current IGBT (Insulated Gate Bipolar Transistor) device
Product Features and Performance
Trench Field Stop IGBT technology
Low saturation voltage
Fast switching speed
High current handling capability
Wide operating temperature range (-55°C to 175°C)
Low switching and conduction losses
Product Advantages
Efficient power conversion and control
Reliable and robust performance
Compact and easy to integrate
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 1200V
Collector Current (Max): 30A
Collector-Emitter Saturation Voltage: 2.3V @ 15V, 15A
Reverse Recovery Time: 270ns
Gate Charge: 53nC
Pulse Collector Current: 60A
Quality and Safety Features
RoHS3 compliant
TO-247 long leads package
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of power electronic applications
Application Areas
Switching power supplies
Motor drives
Inverters
Welding equipment
Induction heating
Other high-power electronic systems
Product Lifecycle
This IGBT model is currently in production and actively supported by the manufacturer.
Key Reasons to Choose This Product
High performance and efficiency
Robust and reliable design
Wide operating temperature range
Easy integration into power electronic systems
Cost-effective solution for high-power applications
