Manufacturer Part Number
STGW75M65DF2
Manufacturer
STMicroelectronics
Introduction
High-performance IGBT (Insulated Gate Bipolar Transistor) for industrial applications
Product Features and Performance
Trench field stop IGBT technology
High current handling capability up to 120A
Low on-state voltage drop of 2.1V @ 15V, 75A
Fast switching with short turn-on/off times
High power density up to 468W
Product Advantages
Improved efficiency and reliability
Reduced power losses
Compact design
Key Technical Parameters
Collector-Emitter Voltage: 650V
Collector Current: 120A (max)
Switching Energy: 690J (on), 2.54mJ (off)
Operating Temperature Range: -55°C to 175°C
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for secure mounting
Compatibility
Compatible with standard IGBT gate drivers
Application Areas
Industrial motor drives
Power converters
Welding equipment
Induction heating
Variable Frequency Drives (VFDs)
Product Lifecycle
Currently in production
No known plans for discontinuation
Key Reasons to Choose This Product
High current and voltage handling capabilities
Low on-state voltage drop for improved efficiency
Fast switching performance for high-speed applications
Wide operating temperature range for demanding environments
Compact and reliable TO-247-3 package
Proven IGBT technology from a reputable manufacturer