Manufacturer Part Number
STGW60H65DRF
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product - Transistor - IGBT - Single
Product Features and Performance
Trench Field Stop IGBT
Operating Temperature Range: -55°C to 175°C (TJ)
Power Rating: 420 W
Collector-Emitter Breakdown Voltage: 650 V
Collector Current (Max): 120 A
Collector-Emitter Saturation Voltage (Max): 2.4 V @ 15 V, 60 A
Reverse Recovery Time: 19 ns
Gate Charge: 217 nC
Collector Current Pulsed (Max): 240 A
Switching Energy: 940 μJ (on), 1.06 mJ (off)
Turn-on/Turn-off Delay Time (@ 25°C): 85 ns/178 ns
Product Advantages
High power handling capability
Fast switching speed
Low on-state voltage drop
Wide operating temperature range
Key Technical Parameters
Trench Field Stop IGBT Technology
Collector-Emitter Breakdown Voltage: 650 V
Collector Current (Max): 120 A
Collector-Emitter Saturation Voltage (Max): 2.4 V
Reverse Recovery Time: 19 ns
Quality and Safety Features
RoHS3 compliant
TO-247-3 package
Compatibility
Through-hole mounting
Application Areas
Power conversion and control applications
Motor drives
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
Current product
Replacement and upgrade options available
Key Reasons to Choose This Product
High power handling capability up to 420 W
Fast switching speed with low switching losses
Wide operating temperature range of -55°C to 175°C
Robust TO-247-3 package for reliable operation
Suitable for a variety of power conversion and control applications
STGW60NC60WDSTMicroelectronics