Manufacturer Part Number
STGW60H65DFB
Manufacturer
STMicroelectronics
Introduction
IGBT (Insulated Gate Bipolar Transistor) power semiconductor device
Product Features and Performance
Trench Field Stop IGBT technology
650V rated collector-emitter voltage
80A maximum collector current
375W maximum power
Low Vce(on) of 2V @ 15V, 60A
Fast reverse recovery time of 60ns
Gate charge of 306nC
High current handling capability of 240A pulsed collector current
Product Advantages
Efficient power switching
High-power density
Fast switching performance
Robust and reliable
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 80A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Reverse Recovery Time (trr): 60ns
Gate Charge: 306nC
Current Collector Pulsed (Icm): 240A
Switching Energy: 1.09mJ (on), 626J (off)
Td (on/off) @ 25°C: 51ns/160ns
Quality and Safety Features
ROHS3 compliant
TO-247 package for efficient thermal management
Compatibility
Through-hole mounting
Application Areas
Power conversion systems
Motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating
Household appliances
Product Lifecycle
Current product offering
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Efficient and high-performance IGBT design
Robust and reliable operation
Wide range of power and current handling capabilities
Fast switching speed and low switching losses
Compatibility with various power electronics applications
STGW80H65DFB-4STMicroelectronicsIGBT BIPO 650V 80A TO247