Manufacturer Part Number
STGW60H65FB
Manufacturer
STMicroelectronics
Introduction
High-power insulated gate bipolar transistor (IGBT) device
Product Features and Performance
Trench Field Stop IGBT technology
Low conduction and switching losses
High-speed switching capability
Optimized for high-power and high-efficiency applications
Product Advantages
Robust and reliable performance
Enhanced thermal management
Reduced power consumption and higher efficiency
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 650 V
Current Collector (Ic) (Max): 80 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Gate Charge: 306 nC
Current Collector Pulsed (Icm): 240 A
Switching Energy: 1.09mJ (on), 626J (off)
Td (on/off) @ 25°C: 51ns/160ns
Quality and Safety Features
RoHS3 compliant
Designed for high-reliability and long-term operation
Compatibility
Compatible with a wide range of high-power applications
Application Areas
Industrial motor drives
Power supplies
Inverters
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating
Traction control systems
Product Lifecycle
This product is actively supported and not nearing discontinuation
Replacement or upgrade options are available from the manufacturer
Several Key Reasons to Choose This Product
Excellent efficiency and high-speed switching performance
Robust and reliable design for demanding applications
Optimized thermal management for improved system reliability
Wide range of application support and ongoing product availability