Manufacturer Part Number
STGW80H65DFB
Manufacturer
STMicroelectronics
Introduction
High-performance IGBT transistor for industrial and power electronics applications
Product Features and Performance
Trench Field Stop IGBT technology
650V Collector-Emitter Breakdown Voltage
120A Collector Current (Max)
469W Power Dissipation (Max)
Fast switching with 85ns Reverse Recovery Time
Low Vce(on) of 2V @ 15V, 80A
414nC Gate Charge
Product Advantages
High power density and efficiency
Rugged and reliable performance
Suitable for high-power industrial applications
Key Technical Parameters
Collector-Emitter Voltage: 650V
Collector Current: 120A
Vce(on): 2V @ 15V, 80A
Reverse Recovery Time: 85ns
Gate Charge: 414nC
Quality and Safety Features
RoHS3 compliant
Qualified for industrial and automotive applications
Designed for safe and reliable operation
Compatibility
TO-247-3 package
Suitable for a wide range of industrial power electronics systems
Application Areas
Industrial motor drives
Power inverters and converters
Welding equipment
HVAC systems
Renewable energy systems
Product Lifecycle
Currently in active production
No plans for discontinuation identified
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High power density and efficiency
Robust and reliable performance
Suitable for demanding industrial applications
Fast switching and low Vce(on) for improved system efficiency
Compatibility with widely used TO-247 package
STGWA15H120DF2STMicroelectronicsIGBT HB 1200V 15A HS TO247-3