Manufacturer Part Number
STGWA19NC60HD
Manufacturer
STMicroelectronics
Introduction
IGBT Transistor
Product Features and Performance
Rated for 600V Collector-Emitter Voltage
Rated for 52A Collector Current
Low Vce(on) of 2.5V @ 15V, 12A
Fast Reverse Recovery Time of 31ns
Gate Charge of 53nC
Pulsed Collector Current up to 60A
Switching Energy of 85J (on) and 189J (off)
Turn-on/off Delay Times of 25ns/97ns
Product Advantages
Excellent Switching Performance
High Power Density
Reliable Operation
Key Technical Parameters
Voltage: 600V Collector-Emitter Breakdown Voltage
Current: 52A Collector Current, 60A Pulsed Collector Current
Switching: 85J Turn-on Energy, 189J Turn-off Energy
Speed: 31ns Reverse Recovery Time, 25ns/97ns Turn-on/off Delay
Quality and Safety Features
RoHS3 Compliant
TO-247 Long Leads Package
Compatibility
Suitable for a Wide Range of Power Electronics Applications
Application Areas
Motor Drives
Power Supplies
Inverters
Industrial Controls
Product Lifecycle
Current Production
Replacements and Upgrades Available
Key Reasons to Choose
Excellent Switching Performance for High-Efficiency Power Conversion
High Power Density for Compact Design
Reliable Operation in Demanding Applications
Compatibility with a Wide Range of Power Electronics Systems
