Manufacturer Part Number
STGWA30M65DF2
Manufacturer
STMicroelectronics
Introduction
High-performance IGBT transistor for industrial applications
Product Features and Performance
Trench Field Stop IGBT technology
High power density and efficiency
Low conduction and switching losses
Fast switching capability
High blocking voltage up to 650V
Collector current up to 60A
Product Advantages
Excellent electrical performance
High reliability and ruggedness
Suitable for high-frequency switching applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 650V
Collector Current (Max): 60A
Collector-Emitter Saturation Voltage: 2V @ 15V, 30A
Reverse Recovery Time: 140ns
Gate Charge: 80nC
Collector Current Pulsed: 120A
Quality and Safety Features
RoHS3 compliant
Designed for high-reliability industrial applications
Compatibility
Compatible with various industrial control systems and power electronics applications
Application Areas
Inverters
Converters
Motor drives
Power supplies
Welding equipment
Induction heating
Product Lifecycle
This product is currently in production and actively supported by the manufacturer.
Key Reasons to Choose This Product
High power density and efficiency
Low conduction and switching losses
Fast switching capability for high-frequency applications
High reliability and ruggedness
Suitable for a wide range of industrial applications
