Manufacturer Part Number
STGWA25M120DF3
Manufacturer
STMicroelectronics
Introduction
High-performance IGBT (Insulated Gate Bipolar Transistor) device
Product Features and Performance
Trench Field Stop IGBT technology
Operates at high voltages up to 1200V
Supports high current up to 50A
Low on-state voltage (Vce(on)) of 2.3V @ 15V, 25A
Fast switching with short reverse recovery time (trr) of 265ns
High power handling capability up to 375W
Wide operating temperature range of -55°C to 175°C
Product Advantages
Efficient power conversion and control
Reliable and robust performance
Compact and space-saving design
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCES): 1200V
Collector Current (IC): 50A
Pulsed Collector Current (ICM): 100A
Gate Charge (Qg): 85nC
Switching Energy (Eon, Eoff): 850μJ (on), 1.3mJ (off)
Turn-on/Turn-off Delay Time (Td(on/off)): 28ns/150ns
Quality and Safety Features
RoHS3 compliant
TO-247 long leads package for secure mounting
Compatibility
Widely compatible with various power electronics applications
Application Areas
Motor drives
Power supplies
Inverters
Converters
Industrial automation
Renewable energy systems
Product Lifecycle
Currently available, no discontinuation or obsolescence expected in the near future
Several Key Reasons to Choose This Product
High-performance IGBT for efficient power conversion and control
Reliable and robust design for industrial-grade applications
Wide operating temperature range for versatile use cases
Fast switching and low on-state voltage for improved system efficiency
Compact and space-saving package for easy integration
