Manufacturer Part Number
STGW80H65DFB-4
Manufacturer
STMicroelectronics
Introduction
High-performance Trench Field Stop IGBT module
Product Features and Performance
High power density
Low conduction and switching losses
Fast switching capability
High junction temperature up to 175°C
Rugged and reliable design
Product Advantages
Efficient power conversion
Compact and lightweight design
Suitable for high-power and high-frequency applications
Excellent thermal management
Key Technical Parameters
Collector-Emitter Voltage (VCES): 650V
Collector Current (IC): 120A
On-state Voltage Drop (VCE(on)): 2V @ 15V, 80A
Reverse Recovery Time (trr): 85ns
Gate Charge (Qg): 414nC
Switching Energy (Eon/Eoff): 2.1mJ/1.5mJ
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and long service life
Compatibility
Compatible with standard IGBT gate drivers and control systems
Application Areas
Industrial motor drives
Power supplies
Renewable energy systems
Traction and transportation applications
Product Lifecycle
Current product offering
Replacements and upgrades may be available
Key Reasons to Choose This Product
High efficiency and low losses
Fast switching capability for high-frequency applications
Robust and reliable design for demanding environments
Compact and lightweight construction for space-constrained designs
Excellent thermal management for high-power applications
