Manufacturer Part Number
STGW50H60DF
Manufacturer
STMicroelectronics
Introduction
High-performance Insulated Gate Bipolar Transistor (IGBT)
Suitable for industrial and power conversion applications
Product Features and Performance
Trench Field Stop IGBT technology
Collector-Emitter Voltage (VCE) up to 600V
Collector Current (IC) up to 100A
Low On-state Voltage (VCE(on)) of 1.8V @ 50A
Fast Switching Characteristics
Reverse Recovery Time (trr) of 55ns
Product Advantages
High power density
Efficient power conversion
Reliable performance
Compact design
Key Technical Parameters
Collector-Emitter Voltage (VCE): 600V
Collector Current (IC): 100A
On-state Voltage (VCE(on)): 1.8V @ 50A
Reverse Recovery Time (trr): 55ns
Gate Charge: 217nC
Quality and Safety Features
ROHS3 compliant
Suitable for industrial and power conversion applications
Robust design for reliable operation
Compatibility
Can be used in a variety of power conversion and industrial applications
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Solar inverters
Uninterruptible Power Supplies (UPS)
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
High power density and efficient power conversion
Reliable and robust performance
Fast switching characteristics for improved system efficiency
Compact design for space-constrained applications
Suitable for a wide range of industrial and power conversion applications
