Manufacturer Part Number
STGW40V60DLF
Manufacturer
STMicroelectronics
Introduction
Single IGBT (Insulated Gate Bipolar Transistor) device
Product Features and Performance
Trench Field Stop IGBT technology
Rated for up to 600V collector-emitter voltage
Capable of up to 80A continuous collector current
Low on-state voltage drop of 2.3V @ 40A, 15V gate voltage
Fast switching with turn-off time of 208ns
High 283W power handling capability
Product Advantages
Efficient power conversion with low conduction and switching losses
Robust and reliable performance
Suitable for a wide range of power electronics applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 80A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Gate Charge: 226nC
Current Collector Pulsed (Icm): 160A
Switching Energy: 411J (off)
Td (on/off) @ 25°C: -/208ns
Quality and Safety Features
ROHS3 compliant
Operating temperature range: -55°C to 175°C
Compatibility
Through-hole mounting in TO-247-3 package
Application Areas
Power electronics
Motor drives
Inverters
Welding equipment
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
Current production model, no discontinuation plans known
Key Reasons to Choose
Excellent power handling and efficiency
Fast switching for high-frequency applications
Robust and reliable performance
Wide operating temperature range
Compatibility with common power electronics circuits
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