Manufacturer Part Number
STGW40V60DF
Manufacturer
STMicroelectronics
Introduction
High-power, high-performance IGBT transistor
Product Features and Performance
Trench Field Stop IGBT technology
Very low on-state voltage drop
Fast switching speed
High short-circuit capability
Low switching losses
Robust and reliable design
Product Advantages
Efficient power conversion
High-frequency operation
Compact design
Improved system efficiency
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 80 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Reverse Recovery Time (trr): 41 ns
Gate Charge: 226 nC
Current Collector Pulsed (Icm): 160 A
Switching Energy: 456J (on), 411J (off)
Td (on/off) @ 25°C: 52ns/208ns
Quality and Safety Features
RoHS3 compliant
Meets high-reliability standards
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
Motor drives
Power supplies
Inverters
Uninterruptible power supplies (UPS)
Welding equipment
Industrial automation
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgraded models may be available in the future.
Key Reasons to Choose This Product
Excellent performance and efficiency
Reliable and robust design
Compact and easy to integrate
Suitable for high-power, high-frequency applications
Proven technology from a leading semiconductor manufacturer
STGW40NC60WDKSTM